Specification

MaterialGaN-on-Silicon epiwafer
Wafer size 2-inch / 4-inch
AFM RMS (nm)of 2x2um2<= 0.17 nm
X-ray GaN reflection (00.2) Linewidth (degree)<= 0.16
X-ray GaN reflection (10.2) Linewidth (degree)<= 0.59
Bow(μm)<= 30 μm
Edge exclusion< 5 mm
GaN thickness <= 4 μm
Buffer layerNOVA-GaN proprietary technology
Substrate materialSilicon substrate Si(111)
Si wafer thickness (μm)675 μm (2-inch) / 1000 μm (4-inch)