These components are the invisible backbone of modern life—responsible for converting and controlling energy in virtually every electronic system. From smartphone chargers to home appliances, industrial robotics to 5G infrastructure, and from electric vehicles to the AI data centers powering tomorrow’s intelligence—power devices are everywhere.
One material is transforming how these systems handle power: Gallium Nitride (GaN). GaN is a next-generation semiconductor that can switch electricity faster, run cooler, and handle more power than traditional silicon.
You may have already seen GaN in action: modern smartphone chargers are smaller, cooler, and more powerful thanks to early GaN technology. These improvements come from higher power density and lower energy losses.
As demand for energy efficiency and performance grows, the need for more capable and cost-effective power switching solutions becomes critical.
Gallium Nitride (GaN) Crystal Structure
GaN reduces energy losses during switching, improving overall system performance—especially critical in applications like electric vehicles and data centers where every watt counts.
With significantly higher switching frequencies than silicon, GaN enables more compact designs, faster system response times, and reduced magnetic component size.
GaN’s performance allows systems to deliver more power in less space. This enables smaller, lighter, and more integrated designs across sectors—from consumer electronics to industrial drives.
GaN devices can operate reliably at higher temperatures, minimizing the need for heavy or complex cooling solutions and simplifying thermal management.
In 2017, a new standard was set by the adoption of SiC, unlocking significant efficiency gains in electric vehicles—but at high material and production costs.
At EpinovaTech, our answer is NovaGaN®: a proprietary GaN process platform that delivers superior performance using GaN structures grown on cost-effective silicon wafers.
The result? Higher power density. Lower system cost. And a path to bring premium EV efficiency to the mass market.
Electric vehicles are redefining transportation, but they come with steep demands for performance, efficiency, and cost. At the center of this challenge is a critical component: the power switch.
Every time you accelerate, charge, or brake, power switches regulate the energy flow between the battery and drivetrain. In today’s EVs, the semiconductors Silicon (Si) and Silicon Carbide (SiC) dominate—both come with trade-offs.
NovaGaN® changes the equation.
Our proprietary process enables a new class of vertical GaN power switches that deliver the performance of SiC, at a fraction of the cost. Built on industry-standard 8-inch wafers and compatible with standard manufacturing infrastructure, NovaGaN® makes high-performance EVs scalable and affordable.
NovaGaN® doesn’t just improve performance—it reshapes the economics of electric power systems.
By combining lower on-resistance, higher power density, and faster switching speeds, NovaGaN® enables smaller, lighter components and more compact system designs, with fewer bulky passives and simplified thermal management. This translates to reduced material costs, lower system weight, and simpler cooling—critical advantages in electric vehicles and high-performance applications.
These gains go beyond efficiency. They simplify design, free up space for more battery capacity, and help extend vehicle range. And with higher switching frequencies, NovaGaN® opens the door to entirely new system architectures, redefining how power conversion is approached in future mobility platforms.
From sleeker power modules to lighter inverters, NovaGaN® makes high-efficiency systems more affordable to build and easier to scale.
In short: better performance, lower cost, and smarter use of space—without compromise.
At the core of NovaGaN® is our patented nanopillar architecture—a fundamental breakthrough in Gallium Nitride processing.
By growing GaN on engineered nanopillars, we dramatically reduce crystal defects, enabling thinner epitaxy, better yield, and higher voltage capability—on standard 8-inch silicon wafers.
This innovation unlocks high-efficiency, high-power GaN devices at a fraction of the cost—bringing next-generation power electronics to automotive, AI, and energy systems.
EpinovaTech is a fabless company.
We don’t manufacture chips—we enable them. Our business model is centered on licensing NovaGaN® to foundries and semiconductor manufacturers worldwide.
Whether a foundry is entering the GaN market or looking to improve the performance and cost efficiency of its existing GaN offering, NovaGaN® provides a scalable, production-ready path forward. Built on industry-standard 8-inch silicon wafers and compatible with conventional toolsets, our process integrates smoothly into existing lines—minimizing capex and accelerating time to market.
With NovaGaN®, we offer not just a technical breakthrough—but a clear commercial advantage.
Significantly lower system cost compared to Silicon Carbide
Compatible with standard semiconductor manufacturing tools
NovaGaN® isn’t just an innovation. It’s the industrialization of the next generation of power electronics.
Vertical GaN devices on 8-inch silicon wafers
Designed for high performance applications
Fabless model enables global scalability through licensing
Higher power density compared to Silicon Carbide and legacy silicon
At the core of NovaGaN® is our patented nanopillar architecture—a fundamental breakthrough in Gallium Nitride processing.
By growing GaN on engineered nanopillars, we dramatically reduce crystal defects, enabling thinner epitaxy, better yield, and higher voltage capability—on standard 8-inch silicon wafers.
This innovation unlocks high-efficiency, high-power GaN devices at a fraction of the cost—bringing next-generation power electronics to automotive, AI, and energy systems.
EpinovaTech was founded to address fundamental limits in GaN power electronics. Since inception, the company has grown into a cross-functional team driving commercialization through collaboration with top industry partners.
